| 摘要 |
PURPOSE: A polycrystalline thin film transistor is provided to prevent two gates from being degenerated to depress screen malfunction of a display screen. CONSTITUTION: The polycrystalline thin film transistor includes a polysilicon layer, the first gate electrode(150a) and the second gate electrode(150b). Each end of the polysilicon layer is coupled with a source line and a pixel line, respectively. The first and the second gate electrode are formed by raising gate SiO2 layer on the polysilicon layer. The first gate electrode is formed by a scan line overlapping the polysilicon layer. The second gate electrode is formed by the scan line. Each end of the second gate line is coupled with connection lines, respectively, which provide two paths on the scan line. The second gate electrode is arranged parallel with the first gate electrode and is provided a parallel extension line to have an U-shape as a result.
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