| 摘要 |
PURPOSE: A hot electron infrared device is provided to reduce the fluctuation of the extinction infrared frequency in response to voltage by selecting, amplifying and processing a certain infrared frequency, and inducing the decreasing of the dark current. CONSTITUTION: A collector layer(2) of a conducting type and a collector barrier layer(3) are formed on the substrate(1). The first base layer(4) of a conducting type, the first resonant tunneling quantum well(15) and the second base layer(8) of a conducting type are formed on the collector barrier layer(3). By depositing the first quantum barrier layer(5), the first quantum well layer(6) and the second quantum barrier layer(7) in turns, the first resonant tunneling quantum well(15) is formed. By depositing the first spacer layer(9) of a non-conducting type, a blocking barrier layer(10), the second resonant tunneling quantum well(17) and the second spacer layer(14) of a non-conducting type, an emitter barrier layer is formed on the second base layer(8). By depositing the third quantum barrier layer(11), the second quantum well layer(12) and the fourth quantum barrier layer(13) in turns, the second resonant tunneling quantum well(17) is formed. An emitter layer(15) of a conducting type is formed on the emitter barrier layer.
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