发明名称 |
METHOD OF FABRICATION ACTIVE LAYER OF SEMICONDUCTOER DEVICE |
摘要 |
PURPOSE: A method for manufacturing an active layer for a semiconductor device is provided to form the active layer on the substrate with ease and to improve the electrical property such as electron mobility and uniformity of the layer. CONSTITUTION: The method includes following steps. At the first step, an amorphous silicon layer(4) is formed on the substrate(2). At the second step, an electron beam is illuminated with a predetermined pattern on the upper surface of the amorphous silicon layer. At the third step, the whole surface of the amorphous silicon layer is annealed with a laser beam having predetermined energy density and the amorphous silicon layer is converted to a polysilicon layer having a crystal structure based on the predetermined pattern. The substrate is made of glass or silicon material. The laser beam is generated by an excimer laser illuminating laser at an energy density between 255mJ/cm2 and 370mJ/cm2. The semiconductor substrate is thin film transistor.
|
申请公布号 |
KR100268064(B1) |
申请公布日期 |
2000.10.16 |
申请号 |
KR19980014713 |
申请日期 |
1998.04.24 |
申请人 |
HAN, MIN GOO |
发明人 |
PARK, CHEOL MIN;JEON, JAE HONG;YU, JUN SEOG;HAN, MIN GU |
分类号 |
H01L21/31;(IPC1-7):H01L21/31 |
主分类号 |
H01L21/31 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|