METHOD FOR MANUFACTURING METAL OXIDE SEMICONDUCTOR TRANSISTOR

摘要

PURPOSE: A method for manufacturing a metal oxide semiconductor(MOS) transistor is provided to re-oxidize a gate by using oxygen or vapor and nitrogen mixture gas while preventing titanium silicide from diffusing to polysilicon. CONSTITUTION: A method for manufacturing a metal oxide semiconductor(MOS) transistor comprises a process for forming a MOS transistor by sequentially evaporating and patterning a silicide layer in order to decrease resistance of a gate and a diffusion blocking layer on a polysilicon gate. In the method, tungsten silicide is used as the diffusion blocking layer and the silicide layer for reducing the gate resistance is made from titanium silicide. After forming a gate electrode, the tungsten silicide, titanium silicide and side surface of the polysilicon gate are re-oxidized by using oxygen or vapor and nitrogen mixture gas.