| 摘要 |
PURPOSE: A method for fabricating a thin film transistor substrate is provided to be capable of simplifying the fabricating method. CONSTITUTION: A method for fabricating a thin film transistor substrate comprises depositing and patterning a metal film over an insulation substrate(10) to form a common line having an electrode for a maintenance capacitor and a gate line. A semiconductor layer(40) and an etch stopper(70) are formed over a gate electrode(24) and a contact hole exposing a gate pad is formed. A positive photoresist film is deposited and exposed over the insulator film(70) for the etch stopper by use of a mask, whose penetration ratio is different partially. A gate insulation film pattern(30), which has a contact hole exposing the gate pad, is formed by etching the insulation film(70) for the etch stopper, the semiconductor layer(40) and the gate insulation film(30). Resistor contact layers(52,54,56,57,59), data lines(62,64,66), and pixel lines(67,69) are formed by depositing and patterning a conductor for a data line sequentially.
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