发明名称 GATE DRIVER FOR HIGH VOLTAGE THYRISTOR-DIODE SWITCHES
摘要 PURPOSE: An apparatus for driving a high voltage thyristor diode switch is provided to reduce size and weight by realizing a TDS driving apparatus with a small number of elements. CONSTITUTION: A thyristor(T1) is connected to a diode(D1) in inverse parallel. One TDS is composed of the thyristor(T1) and the diode(D1). Four TDSs compose one TDS module. One TDS module is driven by one voltage transformer(Tr). Control signal voltages(Vgate) on both sides of the first side of a high voltage insulation pulse transformer is divided into K number of modules. The second side voltage of one module is Vgate/K. If a voltage to be controlled by the whole switch modules is 80kV and one TDS voltage rating is 1kv, at least 80 TDS should be connected in series.
申请公布号 KR100267460(B1) 申请公布日期 2000.10.16
申请号 KR19980006502 申请日期 1998.02.27
申请人 KOREA HEAVY INDUSTRIES & CONSTRUCTION CO., LTD;KOREA ELECTRO TECHNOLOGY RESEARCH INSTITUTE 发明人 RIM, GEUN-HIE;KIM, JONG-SOO;KIM, WON-HO;KANG, IOU-RY;HAM, BYUNG-HUN;SONG, MOON-SUNG
分类号 H02M1/06;H02M1/00;H02M1/08;(IPC1-7):H02M1/00 主分类号 H02M1/06
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