| 发明名称 |
A METHOD FOR MANUFACTURING A CAPACITOR IN A SEMICONDUCTOR USING THE PLASMA TREATMENT |
| 摘要 |
PURPOSE: A method of manufacturing a capacitor of a semiconductor device using a plasma process is provided to improve the characteristic of power leakage of the capacitor by a certain surface treatment of dielectric layer. CONSTITUTION: A capacitor is formed on the substrate of a semiconductor device. The capacitor is exposed to a plasma of the source gas including the hydric atom.
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| 申请公布号 |
KR100269314(B1) |
申请公布日期 |
2000.10.16 |
| 申请号 |
KR19970059413 |
申请日期 |
1997.11.12 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
CHO, HAG-JU |
| 分类号 |
H01L27/04;H01L21/02;H01L21/314;H01L21/822;H01L21/8242;H01L27/08;H01L27/108;(IPC1-7):H01L27/108 |
主分类号 |
H01L27/04 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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