| 摘要 |
PURPOSE: A DRAM cell capacitor and its manufacturing method are provided to increase the surface area of the storage electrode as well as simplify the storage electrode formation process. CONSTITUTION: The storage electrode pads are formed. A first insulation layer is formed thereon. A conductive pattern is formed thereon to overlap with one of the storage electrode pads(16) and extended to one direction of the storage electrode pad. A second insulation layer(18) is formed. A first material layer(22) is formed thereon to have a certain etch selectivity with the second insulation layer. Until the surface of the first insulation layer on the storage electrode pad is exposed, the first material layer, the second insulation layer and conductive pattern are successively etched to form at least one opening. On both sidewalls of the first opening, a conductive spacer is formed. Until the top surface of the storage electrode pad is exposed, the first insulation layer is etched to form the second opening. The second and first openings are filled up with conductive layer to thereby form a first conductive pole. Until the surface of the second insulation layer is exposed, the conductive layer and the first material layer is planarized. A second insulation layer far placed at a distance from one side of the first conductive part is etched, and a third opening is formed until the second insulation is etched. The third opening is filled up with the same material of the first conductive pole, and the second conductive pole is formed.
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