| 摘要 |
PURPOSE: A polysilicon thin film transistor is provided to minimize the influence of defective grain boundaries in a polysilicon thin layer and thereby to improve the mobility of carriers. CONSTITUTION: A thin film transistor is formed near an intersection between a buried bus line(BB) longitudinally formed on an insulating substrate and a gate bus line(GB) latitudinally formed on the insulating substrate. Also, a polysilicon thin layer(23) as an active region of the transistor is formed on the substrate, interlaying a buffer insulating layer therebetween. A gate electrode(27) diverges from the gate bus line(GB) and is extended onto the polysilicon thin layer(23). An ITO(indium tin oxide) electrode(28a) and an ITO pixel electrode(28b) are connected to a source and a drain of the transistor, respectively. In particular, a pair of metal patterns(30) are formed under the polysilicon thin layer(23) in a direction of a channel.
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