| 摘要 |
PURPOSE: A method for manufacturing a semiconductor device is provided to simplify a manufacturing process and to guarantee a broad contact margin, by eliminating the sidewall spacer formed on the sidewall of a gate for forming a lightly doped drain after source/drain are formed. CONSTITUTION: A gate oxidation layer(13) is formed on a silicon wafer(11) in which an isolation region is defined. A gate poly(14) is formed by evaporating and patterning polysilicon. Next, low-density source/drain(15) are formed by injecting P-type or N-type impurity ions of low density into the silicon wafer. And, a polymer layer is coated on the entire surface of the silicon wafer and a sidewall spacer is formed on the sidewall of the gate poly by a plasma etching. Then, high-density source/drain(17) are formed by injecting into the silicon wafer high-density impurity ions of the same conductivity type as the impurities injected into the low-density source/drain. Annealing the silicon wafer to activate the impurities injected into the low and high-density sources/drains. Lastly, The sidewall spacer remaining on the sidewall of the gate poly is eliminated.
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