| 摘要 |
PURPOSE: A method for manufacturing a thin film transistor are provided to reduce the resistance of the substrate by using metals as the wire without requiring supplement steps of manufacturing operation. CONSTITUTION: The thin film transistor includes a substrate, a shading film, a pixel electrode, the first insulator layer(104), a drain electrode, a source electrode(105), an impurity semiconductor layer(106), a silicon layer(107), a gate insulator layer and gate layer(109). The shading film is formed by accumulating a transparent conductive layer and a metal layer on one portion of the substrate. The pixel electrode is formed by removing the metal layer leaving the transparent conductive layer on the portion of the substrate. The first insulator layer covers at least the shading film. The drain electrode is patterned in a shape overlapping one terminal region of the shading film on the first insulator layer covering the shading film. The source electrode is formed over the terminal of the pixel electrode on the first insulator layer at the position overlapped with that of the other terminal region of the shading film. The impurity semiconductor layer is formed on the aligned terminal of the source electrode and the drain electrode, respectively. The silicon layer is accumulated on the impurity semiconductor layer and the source layer. The gate insulator layer and gate layer is accumulated on the silicon layer with the pattern same to that of the silicon layer.
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