发明名称 |
Nonvolatile memory |
摘要 |
A nonvolatile memory cell which is highly scalable includes a cell formed in a triple well. A select transistor can have a source which also acts as the emitter of a lateral bipolar transistor. The lateral bipolar transistor operates as a charge injector. The charge injector provides electrons for substrate hot electron injection of electrons onto the floating gate for programming. The cell depletion/inversion region may be extended by forming a capacitor as an extension of the control gate over the substrate between the source and channel of said sense transistor. |
申请公布号 |
AU3607400(A) |
申请公布日期 |
2000.10.16 |
申请号 |
AU20000036074 |
申请日期 |
2000.02.25 |
申请人 |
PROGRAMMABLE SILICON SOLUTIONS |
发明人 |
DAVID K. LIU;TING-WAH WONG |
分类号 |
G11C16/04;H01L21/336;H01L21/8247;H01L27/115;H01L29/423;H01L29/788;H01L29/792 |
主分类号 |
G11C16/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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