| 摘要 |
PROBLEM TO BE SOLVED: To make it possible to form a resist pattern superior in etching resistance in a short time by forming a photosensitive resin composition layer containing a specified amount of a specified compound on the surface of a metal substrate and exposing and developing it, and heat treating the resist on the metal substrate by irradiation with far infrared rays after development. SOLUTION: The photosensitive resin composition layer contains the ethylenically unsaturated compounds in an amount of 50-100 weight% of which is a compound represented by the formula, a polymer having carboxyl groups, a lophine dimer in an amount of 0.5-6.0 weight% of the total weight of the above polymer and the above compound, the photopolymerization initiator in an amount of 0.1-10 weight%, and a leuco dye in an amount of 0.1-3.0 weight%. This resin composition is formed on the surface of the metal substrate and exposed to light and developed, and after the end of development, it is heat treated with far infrared rays. In the formula, each of R1 and R2 is, independently, a 1-3C alkyl group or an H atom, and (n) is an integer of 4-20). |
