发明名称 THRESHOLD VOLTAGE MEASURING CIRCUIT
摘要 PURPOSE: A threshold voltage measuring circuit is provided to reduce the fault rate of a semiconductor package by measuring the threshold voltage within each device. CONSTITUTION: A threshold voltage measuring circuit comprises a second PMOS transistor(P2) which receives a power voltage(Vdd) at a source and an enable signal(PE) at a gate. A gate of a first PMOS transistor(P1) is connected to a drain of the second PMOS transistor(P2). The first PMOS transistor(P1) receives the power voltage(Vdd) at a source. A drain of the first PMOS transistor(P1) is connected to a second port of an element. A first transmission gate(TRANS1) is provided to connect the drain of the second PMOS transistor(P2) to a first port of the element. A second NMOS transistor(N2) receives a disable signal(NE) at a gate. A source of the NMOS transistor(N2) is grounded. A gate of a first NMOS transistor(N1) is connected to the drain of the second NMOS transistor(N2). A second transmission gate(TRANS2) is provided to connect the drain of the second NMOS transistor(N2) to the first port of the element.
申请公布号 KR20000060215(A) 申请公布日期 2000.10.16
申请号 KR19990008346 申请日期 1999.03.12
申请人 HYUNDAI MICRO ELECTRONICS CO.,LTD. 发明人 KIM, SA HYEON
分类号 H01L21/66;(IPC1-7):H01L21/66 主分类号 H01L21/66
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