发明名称 |
THRESHOLD VOLTAGE MEASURING CIRCUIT |
摘要 |
PURPOSE: A threshold voltage measuring circuit is provided to reduce the fault rate of a semiconductor package by measuring the threshold voltage within each device. CONSTITUTION: A threshold voltage measuring circuit comprises a second PMOS transistor(P2) which receives a power voltage(Vdd) at a source and an enable signal(PE) at a gate. A gate of a first PMOS transistor(P1) is connected to a drain of the second PMOS transistor(P2). The first PMOS transistor(P1) receives the power voltage(Vdd) at a source. A drain of the first PMOS transistor(P1) is connected to a second port of an element. A first transmission gate(TRANS1) is provided to connect the drain of the second PMOS transistor(P2) to a first port of the element. A second NMOS transistor(N2) receives a disable signal(NE) at a gate. A source of the NMOS transistor(N2) is grounded. A gate of a first NMOS transistor(N1) is connected to the drain of the second NMOS transistor(N2). A second transmission gate(TRANS2) is provided to connect the drain of the second NMOS transistor(N2) to the first port of the element.
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申请公布号 |
KR20000060215(A) |
申请公布日期 |
2000.10.16 |
申请号 |
KR19990008346 |
申请日期 |
1999.03.12 |
申请人 |
HYUNDAI MICRO ELECTRONICS CO.,LTD. |
发明人 |
KIM, SA HYEON |
分类号 |
H01L21/66;(IPC1-7):H01L21/66 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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