发明名称 |
SEMICONDUCTIVE MATERIAL FOR HIGH VOLTAGE |
摘要 |
PURPOSE: A semiconductive material for high voltage is provided to enhance surface property of coarseness and resistance stability due to repetitive heat hysteresis by reducing content of carbon black. CONSTITUTION: A semiconductive material is produced by compounding matrix resin of 100 weight part, carbon black of 40 to 80 weight part, antioxidant 0.2 to 10 weight part, process compound of 0.1 to 10 weight part, crosslink agent 0.1 to 10 weight part, crosslink compound of 0.1 to 10 weight part. The material is mixed by using a kneader mixer and crosslinked for about 20 minutes at 170 dge.C by using a press. The amount of carbon black is reduced more than 15%.
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申请公布号 |
KR20000060114(A) |
申请公布日期 |
2000.10.16 |
申请号 |
KR19990008187 |
申请日期 |
1999.03.12 |
申请人 |
LG CABLE LTD. |
发明人 |
KIM, EUN JU;KIM, HYEON SEOK;PARK, DO HYEON;LEE, GEON JU |
分类号 |
H01B5/16;(IPC1-7):H01B5/16 |
主分类号 |
H01B5/16 |
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