INTEGRATE CIRCUIT DEVICE HAVING BUFFER LAYER CONTAINING METAL OXIDE STABILIZED BY LOW TEMPERATURE TREATMENT AND FABRICATING METHOD THEREOF

摘要

PURPOSE: IC circuit is provided to have a buffering layer made of a metal oxide layer which are stabilized by a low-temperature processing, and reduces a leakage current as well as improving a polarization characteristic of a capacitor. CONSTITUTION: A first metal layer pattern is formed on a semiconductor substrate(100), and is insulated from the substrate. A high dielectric layer pattern is formed on the first metal layer pattern. The second metal layer pattern is formed on the high dielectric layer pattern. A buffering layer(122) is formed on the first metal layer pattern, the high dielectric layer pattern and the second metal layer pattern by an atom layer deposition method, and is stabilized by a low-temperature processing below 600°C. An insulating layer is formed on the buffering layer.