| 摘要 |
PURPOSE: A TFT and a method for manufacturing the device are provided to prevent a hill lock from being generated, an operation speed from being reduced by reducing a resistance of source and drain electrodes and a step coverage of a protective film from being degraded by forming the source and drain electrodes so as to have dual steps height. CONSTITUTION: The TFT includes a substrate(111), a gate(113), a gate insulating film(115), an active layer(117), an ohmic contact layer(119) and source and drain electrodes(125,127). The gate is formed on the substrate. The gate insulating film is formed so as to cover the gate on the substrate. The active layer is formed on the gate insulating film. The ohmic contact layer is formed on the rest part except a part corresponding to the gate of the active layer. The source and drain electrodes are formed of a dual structure composed of first and second metal layers. The first metal layer is connected the ohmic contact layer and has a low electrical resistance and a tension stress. The second metal layer has a compressive stress.
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