LASER DIODE AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A laser diode and method for manufacturing the same are provided to obtain an index guiding structure of a good characteristic and a taped ridge structure of a good characteristic by introducing a reactive ion etching process to apply a taped ridge structure to an index guiding type laser. CONSTITUTION: A laser diode has an active layer(14) between epitaxial layers formed on an n-type GaAs substrate(11). A ridge is formed at a given region of the epitaxial layers. The width of the front side of the ridge is narrower than that of other sides of the ridge. An n-type GaAs current cut layer is formed at both sides of the ridge. A p-type GaAs current conductive layer(23) is formed on the ridge and the n type GaAs current cut layer. A p-type electrode(24) is formed on the p-type GaAs current conductive layer(23) and an n-type electrode(25) is formed below the n-type GaAs substrate(11).