| 摘要 |
PURPOSE: A method of manufacturing thin film transistor is provided to successfully form the crystallization of silicon layer by overlapping the photo-defect part with laser after the amorphous silicon layer is grown. CONSTITUTION: Substrate, gate electrode, insulation layer, and amorphous silicon layer(24) are successively formed. On the surface of the amorphous silicon layer(24), the laser beam is directly sputtered using a cylindrical lens to re-crystallize the amorphous silicon. Formation of the seed of the crystalline is conducted on a gate electrode. The laser beam(y) is sputtered in the way to overlap the photo-defect area(x).
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