METHOD FOR FORMING CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for forming a contact hole of a semiconductor device is provided to improve the reliability of an interconnection line by reducing the formation of a polymer and a resistance of the contact hole. CONSTITUTION: A barrier metal layer(22) and an aluminum layer for metal interconnection and an ARC layer(24) are deposited on a semiconductor substrate(21) in sequence. Then, after coating a photoresist on the ARC layer, the photoresist is patterned by an exposure and developing process. A bottom metal interconnection line(23a) is formed by removing the ARC layer and the aluminum layer and the barrier metal layer selectively using the patterned photoresist as a mask. Then, the photoresist is removed and a conductive material like a TiN film is deposited by a PVD or a CVD method on the semiconductor substrate, and then a conductive side wall(26) is formed by etching back the conductive material on a side of the bottom metal interconnection line. And, an interlayer insulation film for planarization is deposited on the substrate, and a contact hole(28) is formed on the surface of the ARC layer by removing the interlayer insulation layer selectively. Then, a top metal interconnection line is formed which is connected with the bottom metal interconnection line electrically through the contact hole.