| 摘要 |
PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to improve the electrical characteristics and the reliability of the device. CONSTITUTION: An insulation film(32) is formed on a whole surface where a bottom structure like an isolation insulation film and a gate oxide and a gate electrode is formed on a semiconductor substrate(30). Then, a contact hole is formed by etching the insulation film using a contact mask. After forming a poly silicon film on the whole surface of the contact hole structure, a contact plug(34) filling the contact hole is formed by blanket-etching the poly silicon film. Next, a diffusion-blocking film comprising a Ti(36)/TiN(38) on the whole surface. Next, after forming a Pt film(40) as a bottom electrode on the diffusion-blocking film, a TiN film(42) and a nitride film(44) are formed in sequence. The TiN film is for improving an adhesion with the diffusion-blocking film. Then, a nitride film pattern and a bottom electrode pattern and a diffusion-blocking film pattern are formed by performing an etching process until an upper surface of the insulation film is revealed. And, after removing the nitride film and the TiN film and the bottom electrode and the diffusion-blocking film, a dielectric film(46) is formed on the pattern. And, after forming a dielectric film pattern, a capacitor is formed by forming a plate electrode comprising the Pt.
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