TRANSISTOR STRUCTURE AND METHOD FOR MANUFACTURING THE SAME

摘要

PURPOSE: A transistor structure is to provide a field effect transistor having three gates which has a channel length shorter than a lithography limit and is capable of variously controlling the distribution of an impurity density of a substrate. CONSTITUTION: A transistor structure comprises first and second side gates, a main gate(15), an insulating layer and source/drain impurity regions(12,13). The first and second side gates are formed on a semiconductor substrate(11), having a constant interval from each other. The main gate is formed on the semiconductor substrate between the first and second side gates while overlapped with the first and second side gates. The insulating layer is formed between the first and second side gates and the semiconductor substrate, between the main gate and the semiconductor substrate, and between the first and second side gates and the main gates. The source/drain impurity regions on the semiconductor substrate on both sides of the first and second side gates.