METHOD FOR MANUFACTURING DIFFUSION BARRIER METAL OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a diffusion barrier metal of a semiconductor device is provided to form a diffusion barrier metal having uniform and low resistance in a contact hole. CONSTITUTION: In a method for manufacturing a diffusion barrier metal of a semiconductor device, the improvement comprises the steps of: evaporating a titanium metal thin film(13) by a physical vapor deposition(PVD) process on the entire surface of a lower conductive layer having a contact hole; and evaporating a titanium nitride metal thin film(15) on the titanium metal thin film by a chemical vapor deposition(CVD) process.