| 摘要 |
PURPOSE: A liquid crystal display device forming method is provided to be capable of simplifying an overall process by reducing a photo process number. CONSTITUTION: In a liquid crystal display device forming method, after forming a metal film on an insulation substrate(200), a first indium thin oxide(ITO), a silicon nitride film, an amorphous silicon film and a doped silicon film are sequentially deposited on a resultant structure. A gate electrode(202), a first transparent conductive film(200), a gate insulation film(204), an active layer(222) and an ohmic contact layer(224) are formed on the insulation substrate(200) by patterning the sequentially stacked films at the same time. An insulation film is formed on the substrate to cover the gate electrode(202), the first transparent conductive film(200), the gate insulation film(204), the active layer(222) and the ohmic contact layer(224), and an insulation sidewall(230) is formed by performing an etch back process until the ohmic contact layer(224) is exposed. A second ITO film and a chrome metal film are sequentially deposited on a resultant structure, and the chrome metal film is patterned so as to expose a center of the active layer and to surround an edge of the active layer. An organic insulation film is deposited on the substrate, and a passivation film(240) is formed by patterning the organic insulation film so as to expose a drain electrode formation region. The chrome metal film(234) is etched by use of the passivation film as a mask, thus the drain electrode formation region and a second transparent conductive film(232), which is connected to the drain electrode(234), are exposed. The second transparent conductive film(232) is the second ITO film below the patterned chrome metal film(234).
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