METHOD AND APPARATUS FOR PLASMA ETCHING

摘要

PURPOSE: A method for a plasma etching is provided to prevent a charge-up damage by minimizing an electron temperature in a dry etching process. CONSTITUTION: A method for a plasma etching comprises the steps of: preparing plasma by applying a radio frequency(RF) source power to a first electrode in an etch chamber; and applying an RF bias power to a second electrode in an etch chamber including a supporting bar of a substrate. The RF source power and RF bias power are periodically turned on and off to have a phase difference between the RF source power and RF bias power, so that a charge separation generated between an upper region of a material layer pattern and a lower region of a neighboring material layer pattern is minimized.