| 摘要 |
PURPOSE: A polysilicon thin film transistor device and a manufacturing method thereof are provided to realize a planarized interface between a polysilicon layer and an insulating layer, and thereby to remove trap level of electron and to reduce back-channel effect. CONSTITUTION: To manufacture a thin film transistor, an insulating layer is first formed on a substrate. An amorphous silicon layer is then deposited on the insulating layer, dehydrogenated, and crystallized into a polysilicon layer(113) having grains and grain boundaries(119). Then, the grain boundaries(119) and the underlying insulating layer are selectively etched, so that grooves(125) corresponding to grain boundaries(119) are formed in the insulating layer. The grooves(125) are filled with the melted polysilicon layer(113) in the subsequent re-crystallization process, and therefore the polysilicon layer(113) is planarized.
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