发明名称 POLISHING HEAD STRUCTURE OF CHEMICAL MECHANICAL POLISHING FACILITIES
摘要 PURPOSE: A polishing head structure of chemical mechanical polishing(CMP) facilities is provided to exhaust a sludge from a bottom of an end effector to the outside by forming a penetration hole. CONSTITUTION: A polishing head structure of chemical mechanical polishing(CMP) facilities having a holder(30), a magnet(32) and an end effector(34) with a plurality of vertically-penetrated holes, comprises a supporting element(38) and a penetration hole(40). The supporting element is established between the end effector and the magnet. Therefore, a space is formed to have the plurality of holes of the end effector aligned. The penetration hole penetrates the holder and magnet in a vertical direction to have the space between the end effector and magnet go through the outside.
申请公布号 KR20000059931(A) 申请公布日期 2000.10.16
申请号 KR19990007869 申请日期 1999.03.10
申请人 ANAM SEMICONDUCTOR., LTD. 发明人 PARK, HYEON MUN
分类号 H01L21/304;(IPC1-7):H01L21/304 主分类号 H01L21/304
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