发明名称 |
POLISHING HEAD STRUCTURE OF CHEMICAL MECHANICAL POLISHING FACILITIES |
摘要 |
PURPOSE: A polishing head structure of chemical mechanical polishing(CMP) facilities is provided to exhaust a sludge from a bottom of an end effector to the outside by forming a penetration hole. CONSTITUTION: A polishing head structure of chemical mechanical polishing(CMP) facilities having a holder(30), a magnet(32) and an end effector(34) with a plurality of vertically-penetrated holes, comprises a supporting element(38) and a penetration hole(40). The supporting element is established between the end effector and the magnet. Therefore, a space is formed to have the plurality of holes of the end effector aligned. The penetration hole penetrates the holder and magnet in a vertical direction to have the space between the end effector and magnet go through the outside.
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申请公布号 |
KR20000059931(A) |
申请公布日期 |
2000.10.16 |
申请号 |
KR19990007869 |
申请日期 |
1999.03.10 |
申请人 |
ANAM SEMICONDUCTOR., LTD. |
发明人 |
PARK, HYEON MUN |
分类号 |
H01L21/304;(IPC1-7):H01L21/304 |
主分类号 |
H01L21/304 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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