| 摘要 |
PURPOSE: A wordline driving circuit of semiconductor memory device is provided to improve reliability of wordline selection by quickly removing noises at each occurrence of noise. CONSTITUTION: A row decoder(20), which is operated based on a row-decoding signal, selects a row address. A plurality of sub-wordlines driving selection part(22) receives first to fourth sub-wordline enable signals WLEN0, WLEN1, WLEN2 and WLEN3 and provides a driving signal to first and second drivers SWD1, SWD2. First and second sub-wordline drivers include a first PMOS transistor MP1 that receives the output signal of the sub-wordlines driving selection part(22) and outputs the first main wordline signal MWL1 from the row decoder(20), a fifth NMOS transistor MN5, and a sixth NMOS transistor MN6 that receives the second main wordline signal MWL2 from the row decoder(20) to emit noises. A column decoding part(24) selects a column address. A sense amplification part(23) senses a memory cell, which is connected to the selected wordlines of each of the first and second sub-wordline drivers.
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