NONVOLATILE FERROELECTRIC MEMORY DEVICE

摘要

PURPOSE: A non-volatile ferroelectric memory device is provided to realize a non-volatile ferroelectric memory device with the SWL structure by removing an additional cell plate line. CONSTITUTION: A main cell array(73) includes even columns. A reference cell array(74) is arranged as two columns. A cell array block(71) includes the main cell array and a reference cell array. SWL word line driver(70) is arranged in parallel to the column. A control block is connected to both ends of the column in order to control another cell array block adjacent to the cell array block.