| 摘要 |
PURPOSE: A method of manufacturing a vertical bipolar transistor is provided to apply to the cell with high intergrity by realizing the vertical bipolar transistor enabling to easily adjust the emitter ground current amplification factor. CONSTITUTION: Ion for collector is injected into an oxidation layer and the heat treatment is conducted to form n- region(12). Photoresist is deposited on the base region of the oxidation layer and RIE etched to remove the oxidation layer on both sides of the base region and the n-region(12) at a predetermined depth and the photoresist is removed. Photoresist is doped on the overall surface, and ion for base is injected. After the heat treatment, the P- region(15) is formed. After the photoresist is removed, metallization is formed on the overall surface of the oxidation layer(16), and the metallization on both sides of the P- region, and the oxidation layer is successively removed. P- polysilicon(18) is doped on the overall surface. The oxidation layer(16) on both sides of the P- region and the unnecessary part of the P- polysilicon(18) are removed to form a sidewall and an oxidation layer(19) is formed thereon. The oxidation layer(19) in emitter electrode contact area is removed to have n+polysilicon(20) deposited thereon. An emitter electrode(21) is formed on the n+polysilicon layer. Oxidation layer(19) on P-region and n- region is individually removed to form a base electrode and a collector electrode individually by depositing metal.
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