发明名称 |
POWER UP CIRCUIT FOR SEMICONDUCTOR MEMORY DEVICE |
摘要 |
PURPOSE: A power-up apparatus of semiconductor memory is provided to reduce the power consumption and to minimize influences of noise by ensuring an initial value when a power-up signal is set and enabling a normal power-up signal when the electric power is extremely fluctuated by the noise. CONSTITUTION: A power-up detecting unit(10) enables a power-up signal(PWRUP) by detecting the state of power-on. A power-up low ensuring unit(20) receives the power-up signal(PWRUP) and an output signal from the power-up detecting unit(10). The power-up low ensuring unit(20) is connected to between a power source(Vcc) and a first node(N1) to ensure an initial value of the power-up signal(PWRUP). A capacitor(30) is coupled to between the first node(N1) and the ground(Vss) to make the initial value of the power-up signal(PWRUP) to low state. A latch(40) is connected to between the first node(N1) and a second node(N2) to eliminate noise. A power-up driver(50) is coupled to the second node(N2) to drive the power-up signal(PWRUP).
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申请公布号 |
KR100268801(B1) |
申请公布日期 |
2000.10.16 |
申请号 |
KR19970030231 |
申请日期 |
1997.06.30 |
申请人 |
HYUNDAI ELECTRONICS IND. CO., LTD |
发明人 |
RYU, JE-HOON |
分类号 |
G11C29/00;(IPC1-7):G11C29/00 |
主分类号 |
G11C29/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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