METHOD FOR MANUFACTURING CHARGE STORAGE ELECTRODE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for making a charge storage electrode of a semiconductor device is provided to enhance a charge storage capacitance by injecting a phosphor when depositing a polysilicon thin film layer for a charge storage electrode. CONSTITUTION: A field oxide layer, a word line(3), a bit line(4), a source/drain area are formed on a silicon substrate(1). IPO(Inter-Poly-Oxide) layer(6) is deposited on the resultant layer. A predetermined part of the IPO layer(6) is etched to form a contact for a charge storage electrode. A first polysilicon thin film(7) is deposited on the contact. A second amorphous silicon thin film(8) is deposited on the first polysilicon thin film(7). A hemispherical third silicon thin film(9) is deposited on the second amorphous silicon thin film(8). A total structure is annealed to form a hemispherical fourth silicon thin film.