METHOD FOR MANUFACTURING GATE ELECTRODE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a gate electrode of a semiconductor device is provided to secure reliability of the gate electrode, by preventing agglomeration on a boundary between a titanium silicide layer and a doped polysilicon layer. CONSTITUTION: A method for manufacturing a gate electrode of a semiconductor device comprises the steps of: sequentially a gate insulating layer(12) and a doped silicon layer(13) on a semiconductor substrate(11); forming a polysilicon-germanium thin film(14) for blocking an atom migration on the doped silicon layer; forming a titanium silicide layer(15) on the polysilicon-germanium thin film; evaporating a mask oxidation layer(16) on the titanium silicide layer; and patterning the mask oxidation layer, titanium silicide layer, polysilicon-germanium thin film and doped silicon layer to form a gate electrode.