METHOD FOR MANUFACTURING CONTACT HOLE OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a contact hole of a semiconductor device is provided to improve a reliability by preventing a substrate from being damaged by forming the contact hole. CONSTITUTION: A method for manufacturing a contact hole of a semiconductor device comprises the steps of: forming a first insulating layer(22) on a semiconductor substrate(21) having a transistor; forming a second insulating layer(23) having an etching selectivity ratio different from that of the first insulating layer, on the first insulating layer; forming a third insulating layer(24) having an etching selectivity ration from different that of the second insulating layer to form the contact hole(26), on the second insulating layer; etching the third insulating layer by a selective etchant of the third and second insulating layers, using a mask; and etching the first insulating layer by a wet etching process.