| 摘要 |
PURPOSE: A method for cleaning a semiconductor device is provided to prevent the quality of the semiconductor device from being deteriorated by cleaning the semiconductor device using an isopropyl alcohol without using water. CONSTITUTION: A semiconductor substrate on which a metal film and a photoresist film are sequentially formed is prepared. Then, the photoresist film is removed. After that, the semiconductor substrate is cleaned by isopropyl alcohol. Then, the semiconductor substrate is placed in a chamber in which an isopropyl alcohol vapor is contained. In the chamber, the isopropyl alcohol is dried. The process for drying the isopropyl alcohol is carried out for about 300 seconds. The water rinse process is not required when the isopropyl alcohol cleaning process is finished.
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