| 摘要 |
PURPOSE: A method for forming a contact hole of a semiconductor device is provided, which is appropriate for a contact requiring a high aspect ratio by forming a contact hole of a vertical cylindrical structure. CONSTITUTION: An insulation film(22) is formed on a semiconductor substrate(21) and a photoresist(23) is deposited on the insulation film. Then, the photoresist is patterned with an exposure and developing process. An effective surface area of the insulation film corresponding to a part to be etched in a following process is increased by performing an Ar sputtering process using the patterned photoresist as a mask. And, a contact hole(24), where an upper part width is equal to a lower part width, is formed by removing the insulation film so that a part of the substrate is revealed using the patterned photoresist as a mask. Therefore, the contact hole has a vertical structure during a dry etching process because the effective surface area of the insulation film is increased.
|
