A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor integrated circuit is provided to produce a crystalline silicon film having a high mobility in which an amorphous silicon film is crystallized by using a metal element for accelerating crystallization. CONSTITUTION: In the device, An oscillator(2) for emitting laser light is provided on a base(1). Full-reflection mirrors(5,6) are arranged on an optical path on the light emission side of the oscillator(2). An amplifier(3), full-reflection mirrors(7,8), an optics(4), and a full-reflection mirror(9) are arranged in this order on an optical path on the reflection side of the full-reflection mirror(6). A stage on which a sample(11) is mounted is disposed on an optical path extending downward from the full-reflection mirror(9).