THIN FILM TRANSISTOR AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A thin film transistor and a manufacturing method thereof are provided to prevent the quality of a semiconductor device from being deteriorated by crystallizing an active layer from an upper portion to a lower portion. CONSTITUTION: A thin film transistor comprises a semiconductor substrate(111). An active layer(115) formed with a source area(127) and a drain area(128) is formed on the semiconductor substrate(111). A crystallization seed layer(121) is formed on the active layer(115) except for a channel area. A gate insulation layer(123) covers the active layer(115) and the crystallization seed layer(121). A gate electrode(125) is formed on the gate insulation layer(123) corresponding to the channel area of the active area(115). The gate electrode(125) is overlapped with the part of the crystallization seed layer(121).