| 摘要 |
PURPOSE: A capacitor and a fabrication method thereof are provided to prevent a failure of two bits due to a bridge, and to assure larger capacitance than a capacitor of a simple stack structure, by excluding a process of etching a polysilicon film and an HSG(Hemi Spherical Grained) film forming process. CONSTITUTION: A gate electrode layer(104) is formed on a semiconductor substrate(100) by intervening a gate oxide. The gate electrode layer is formed by stacking a polysilicon film(104a), a tungsten silicide film(104b) and an oxide(104c). A source/drain region(106) is formed in the semiconductor substrate on both sides of the gate electrode layer. A multi-layered insulation film is formed by stacking an oxide(108) and a silicon nitride film(110) on the semiconductor substrate by including the gate electrode layer. The thickness of the silicon nitride film is about 100-0500 angstrom, and a contact electrode(114) connected with the source/drain electrode electrically is formed on one side of the gate electrode layer by penetrating into the multi-layered insulation film. A capacitor node(120a) is formed on the silicon nitride film by including the contact electrode. The thickness of the capacitor node is about 400-0600 angstrom.
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