| 摘要 |
PURPOSE: A silicon on insulator transistor and a fabrication method thereof are provided to reduce parasitic junction capacitor. CONSTITUTION: A silicon on insulator(SOI) transistor includes a gate oxide(27) on an SOI layer(25) and a gate electrode(29) on the gate oxide(27). The SOI layer(25) is isolated from a handle wafer(21) of a first conductive type by an oxide layer(23). A source region(33a,33b) and a drain region(35a,35b) are respectively formed in the SOI layer(25) around the gate electrode(29), and a spacer(31) is formed on both sides of the gate electrode(29). Additionally, an isolation layer(37) is formed to define an active region therebetween. In particular, an air gap(39) or a dielectric layer having low dielectric constant is formed underneath the source region(33a,33b) and the drain region(35a,35b), reducing parasitic junction capacitor.
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