| 摘要 |
PURPOSE: A method for manufacturing a basic material for copper-plated semiconductor lead frame is provided to secure mechanical properties such as electrical conductivity over 40% IACS, tensile strength 60kg/mm¬2, and elongation over 4% that are required to the basic material for copper-plated semiconductor lead frame. CONSTITUTION: The manufacturing method of a basic material for copper-plated semiconductor lead frame comprises the process of (i) melting mother alloy (Cu containing Ni 32wt.%, Cu containing Si 8wt.%, Cu containing Ti 50wt.%) in a copper with 99.8% or higher purity; (ii) adding therein a mother alloy (Cu containing P 15wt.%) at a molten metal temperature of 1100deg.C; (iii) carrying out continuous casting; (iv) soaking obtained ingot at 950deg.C; (v) cold rolling at a reduction ratio of 75% after solution heat treatment at 900deg.C; (vi) cold rolling at a reduction ratio of 90% after pre-aging at 550deg.C for 300min; (vii) final aging at 450deg.C for 300min. The obtained copper alloy is composed of Ni 1.0-2.0wt.%, Si 0.1-0.3wt.%, P 0.01-0.03wt.%, Ti 0.4-0.8wt.%, and a balance of Cu and also the copper alloy form precipitation of NiTi, δ-Ni2Si.
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