发明名称 APPARATUS FOR COMPENSATING FOR VARIATION OF ION INJECTION QUANTITY OF ION INJECTION FACILITIES
摘要 PURPOSE: An apparatus for compensating for a variation of ion injection quantity of ion injection facilities is provided to prevent an overdose by precisely integrating ion quantity in a chamber. CONSTITUTION: An apparatus for compensating for a variation of ion injection volume of ion injection facilities in which an ion beam(15) generated in a source unit(11) passes through plates(18) and is injected into a wafer of a conveying unit established inside a chamber(17) of an end station(14), comprises a vacuum control unit. The vacuum control unit is established at an external side of a chamber to maintain a constant vacuum within a chamber, to precisely integrate ion quantity.
申请公布号 KR20000060881(A) 申请公布日期 2000.10.16
申请号 KR19990009544 申请日期 1999.03.20
申请人 HYUNDAI MICRO ELECTRONICS CO.,LTD. 发明人 WOO, BYEONG UN
分类号 H01L21/265;(IPC1-7):H01L21/265 主分类号 H01L21/265
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