发明名称 |
APPARATUS FOR COMPENSATING FOR VARIATION OF ION INJECTION QUANTITY OF ION INJECTION FACILITIES |
摘要 |
PURPOSE: An apparatus for compensating for a variation of ion injection quantity of ion injection facilities is provided to prevent an overdose by precisely integrating ion quantity in a chamber. CONSTITUTION: An apparatus for compensating for a variation of ion injection volume of ion injection facilities in which an ion beam(15) generated in a source unit(11) passes through plates(18) and is injected into a wafer of a conveying unit established inside a chamber(17) of an end station(14), comprises a vacuum control unit. The vacuum control unit is established at an external side of a chamber to maintain a constant vacuum within a chamber, to precisely integrate ion quantity.
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申请公布号 |
KR20000060881(A) |
申请公布日期 |
2000.10.16 |
申请号 |
KR19990009544 |
申请日期 |
1999.03.20 |
申请人 |
HYUNDAI MICRO ELECTRONICS CO.,LTD. |
发明人 |
WOO, BYEONG UN |
分类号 |
H01L21/265;(IPC1-7):H01L21/265 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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