| 摘要 |
PURPOSE: A method for manufacturing a high integrated self-aligned contact pad is provided to prevent a recess of a semiconductor substrate and an exposure of a conductive layer which are generated in an etch process for forming a contact pad, and to separate contact pads from each other. CONSTITUTION: A method for manufacturing a high integrated self-aligned contact pad comprises the steps of: sequentially forming an insulating layer and an etching stop layer on a semiconductor substrate(100) having a transistor; forming an etching stop layer and an interlayer dielectric with a selectivity on the entire surface of the semiconductor substrate; etching the interlayer insulating layer by using a mask for forming a pad, until the surface of the etching stop layer is exposed; dry-etching the etching stop layer by the thickness of the etching stop layer; forming an opening for forming a pad by a wet etching process to eliminate a byproduct generated in the dry-etching process and the insulating layer, in which the edge portion of the interlayer dielectric is rounded in the wet etching process; forming a conductive layer for forming a pad on the interlayer dielectric to fill the opening; and etching the conductive layer to form contact pads, in which an etching process to have an etching selectivity between the interlayer insulating layer and conductive layer for a pad separation is carried out to have the contact pads have a step difference with the interlayer dielectric.
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