| 摘要 |
PURPOSE: An electrostatic discharge protective circuit and a manufacturing method thereof are provided to improve the protective characteristics for electrostatic discharge. CONSTITUTION: An electrostatic discharge(ESD) protective circuit is composed of a plurality of transistors(31) input terminals of which are connected through resistors(32) to an input pin between a pad(1) and a main chip(3). The transistors(31) are formed on a substrate, and a first insulating layer is then formed covering the transistors(31) on the substrate. The first insulating layer has first contact holes formed therein to expose the input terminals of the transistor(31), and each of the first contact holes is filled with a buffered layer electrically connected to the input terminal and used as the resistor(32). A second insulating layer is then formed covering the buffered layer on the first insulating layer, and second contact holes are formed in the second insulating layer to expose the buffered layer. The pad(1) is next formed in the second contact holes and on the second insulating layer, and electrically connected to the buffered layer.
|
