| 摘要 |
PURPOSE: A transistor formation method is provided to reduce an electrostatic capacitance between a gate and a drain and to prevent a hot-carrier effect by forming a void at both sides of the gate. CONSTITUTION: After sequentially forming a mask layer(33) and a first sacrificial layer on a substrate(31), a second sacrificial layer having a first trench is formed. After forming spacers at both sides of the first trench, a second trench is formed by etching the first sacrificial layer and a mask layer using the second sacrificial layer and the spacers as a mask. After removing the spacers, a gate oxide(41) is formed on the exposed substrate(31) and a gate(43) is formed on the gate oxide(41) by filling the first and the second trenches. A void(45) is formed by sequentially etching the second and first sacrificial layers and the mask layer, and by removing the remained first sacrificial layer between the mask layer and the gate(43).
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