PLASMA ANODIZING SYSTEM OF RF PLASMA SPUTTER CHAMBER

摘要

PURPOSE: An apparatus for removing chamber impurity is provided to suppress the generation of impurity particles by oxidizing a surface of an inner wall of the chamber shield. CONSTITUTION: A chamber shield(3) is grounded as to an RF power by an RF resonant filter(103). And, a DC power is supplied to the chamber shield by a DC power supply apparatus(102) and thus the chamber shield is anodized to + polarity, and the RF power is blocked to the DC power supply apparatus by an RF blocking filter(101). If the RF power is applied to a sputter chamber, electrons are activated by the RF power in the chamber shield. O2 plasma in the chamber shield generates O- ions by a thermal energy of the activated electrons. The O- ions generated the anodized chamber shield is drawn to oxidize an inner wall of the chamber shield.