| 摘要 |
PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to improve the electrical property of a capacitor bottom electrode. CONSTITUTION: An insulation epi layer is formed on a semiconductor substrate(20), and a contact hole is formed by removing the insulation layer selectively. Then, a plug layer(22) buried in the contact hole is formed, and the first metal layer and the second metal layer(24) contacted to a conductive area formed on the semiconductor substrate are formed in sequence. A work function of the second metal layer is larger than that of the first metal layer. And, an oxide layer(RuOx) is formed between the first and the second metal layer by annealing the thin film layers of the metal layers in an oxygen atmosphere. Then, a dielectric film is formed on a bottom conductive layer comprising the first metal layer/the oxide layer/the second metal layer.
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