| 摘要 |
PURPOSE: A method for fabricating a semiconductor memory device is provided to prevent the generation of mis-alignment using the auto alignment method when performing a process to form a storage node around a node contact hole. CONSTITUTION: The first and the second and the third insulation film(12,13) are formed on a semiconductor substrate(11) in sequence. Then, after depositing a photoresist(PR10) on the third insulation film, the photoresist on a node contact hole region is patterned selectively by defining the node contact hole region with an exposure and a developing process. Then, the first node contact hole is formed by removing the third and the second insulation film. The first and the third insulation film are formed with an oxide, and the second insulation film is formed with a nitride film. The fourth insulation film is formed after removing the photoresist. And, the second node contact hole is formed by etching the first insulation film using the fourth insulation film as a mask. After removing the fourth insulation film, a polysilicon layer is formed. And, a storage node(18a) is formed by etching the polysilicon layer until the upper surface of the third insulation film is revealed with an etch back process using a reactive ion etching method. The third insulation film is removed, and a plate node(20) is formed on a dielectric film after depositing the dielectric film on the surface of the storage node.
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