INTEGRATED SEMICONDUCTOR DEVICE WITH ONE LATERAL POWER GATE

摘要

The invention relates to a semiconductor device (100) which contains a lateral power gate (50). Said power gate (50) is located within a semiconductor layer (20) that consists of a semiconductor material with an energy gap of at least 2 eV and that is laterally delimited by a trench (30) in the semiconductor layer (20). Said semiconductor layer (20) is arranged on a substrate (10) that has a higher thermal conductivity than silicon and that is electrically insulated vis-à-vis a substrate surface (11) that faces away from the semiconductor layer (20). The invention provides an integrated semiconductor device (100) for a high blocking voltage and a high frequency of operation.