METHOD FOR IMPROVING CONTACT MARGIN OF SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to improve a contact margin while minimizing or reducing an increase of resistance. CONSTITUTION: A method for manufacturing a semiconductor device having complementary metal oxide semiconductor(CMOS) transistors on a substrate(10), comprises the steps of: defining an active region(30) on the substrate to form an isolation region; and forming a dummy gate pattern layer(25) on the isolation region. In a succeeding process of the method, an aspect size of a contact window in a photoresist flow process is affected by the dummy gate pattern layer.